SSG8N10
SSG8N10 is N-Channel Enhancement Mode Power MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .
FEATURES
Advanced high cell density Trench technology Super Low Gate Charge Excellent Cd V/dt effect decline 100% EAS Guaranteed Green Device Available
MARKING
8N10SC
Date Code
PACKAGE INFORMATION
Package
SOP-8
3K
Leader Size 13 inch
SOP-8
LD M
JK FE
REF.
A B C D E F G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0°
8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H J K L M N
Millimeter
Min. Max.
0.35 0.49 0.375 REF. 45°
1.35 1.75 0.10 0.25
0.25...
