SSG8N10 Datasheet N-Channel Enhancement Mode Power MosFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

SSG8N10 n-channel enhancement mode power mosfet by SeCoS Halbleitertechnologie GmbH - Datasheet Preview

Datasheet Details

Part number	SSG8N10
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	454.99 KB
Description	N-Channel Enhancement Mode Power MosFET
Datasheet	SSG8N10 Datasheet

General Description

The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications .

Overview

Elektronische Bauelemente SSG8N10 8A , 100V , RDS(ON) 48mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen.

Key Features

Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available.

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