SSG8N10 Description
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.
SSG8N10 is N-Channel Enhancement Mode Power MosFET manufactured by SeCoS Halbleitertechnologie GmbH.
| Part Number | Description |
|---|---|
| SSG8603-C | N & P-Ch Enhancement Mode Power MOSFET |
| SSG0410 | N-Channel MOSFET |
| SSG04N15B-C | N-Channel MOSFET |
| SSG05P03-C | P-Ch Enhancement Mode Power MOSFET |
| SSG07N04-C | N-CH Enhancement Mode Power MOSFET |
The SSG8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications.