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SSM3055 Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: Elektronische Bauelemente SSM3055 4A, 30V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.

General Description

The SSM3055 Provide the designer with the best Combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 Package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage application such as DC/DC conerters.

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Key Features

  • Dynamic dv/dt Rating.
  • Simple Drive Requirement.
  • Repetitive Avalanche Rated.
  • Fast Switching D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID@TA=25к ID@TA=75к IDM PD@TA=25к T.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
SeCoS Halbleitertechnologie Logo SSM3055L N-Channel MOSFET SeCoS Halbleitertechnologie

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