SSPF7490N Description
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
SSPF7490N Key Features
- 55~150
- Diode Forward Voltage
- Dynamic 1
- 58 Qgs
- Gate-Drain Charge Input Capacitance
- 35 Ciss
- Output Capacitance
- Reverse Transfer Capacitance
- Turn-On Delay Time Rise Time
- Turn-Off Delay Time