Download SSPR7N10 Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SSPR7N10
SSPR7N10 is N-Channel Enhancement Mode Power MOSFET manufactured by SeCoS Halbleitertechnologie GmbH.
DESCRIPTION The SSPR7N10 provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SPR-8PP package is universally preferred for all mercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. SPR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 7N10 = Date code PACKAGE INFORMATION Package SPR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 3.25 3.40 3.05 3.25 3.20 3.40 3.00 3.20 0.65 BSC. 2.40 2.60 REF. G H I J K L Millimeter Min. Max. 1.35 1.55 0.24 0.35 1.13 REF. 0.30 0.50 0.10 0.20 0.70 0.90 SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V TC=25°C TC=70°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 VDS VGS IDM EAS 100 ±20 7.5 5.5 13 Avalanche Current Power Dissipation 4 TC=25°C Operating Junction & Storage Temperature IAS PD TJ,...