Download SSQF50N10SV-C Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SSQF50N10SV-C
DESCRIPTION The SSQF50N10SV-C is the Shielded Gate Technology N-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SSQF50N10SV-C meet the Ro HS and Green Product requirement with full function reliability approved. ITO-220J FEATURES - Shielded Gate Trench Technology - Super Low Gate Charge - Green Device Available MARKING 50N10SV  =Date Code ORDER INFORMATION Gate Part Number Type SSQF50N10SV-C Lead (Pb)-free and Halogen-free Drain Source REF. A B C D E F G Millimeter Min. Max. 14.50 15.50 9.50 10.50 13.20 REF. 4.24 4.84 2.52 3.20 2.50 2.90 0.47 0.75 REF. H J K L M N Millimeter Min. Max. 3.80 TYP. 1.30 REF. 0.30 0.90 2.54 REF. 2.70 REF.  3.50 REF. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current 1 @VGS=10V TC=100°C...