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SST2019L-C - Dual N-Ch Enhancement Mode Power MOSFET

General Description

The SST2019L-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications.

Key Features

  • Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available F C H DG K J.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SST2019L-C 5A, 20V, RDS(ON) 27mΩ Dual N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SST2019L-C is the highest performance trench Dual N-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for most of the synchronous buck converter applications. The SST2019L-C meet the RoHS and Green Product requirement with full function reliability approved. SOT-26 A E L B FEATURES Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available F C H DG K J MARKING L2019 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 - 1.