Datasheet4U Logo Datasheet4U.com

SST2610 - N-Channel Enhancement Mode Power MosFET

General Description

The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.

It is universally used for all commercial-industrial applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SST2610 N-Channel MOSFET VBsemi
SST26VF016 (SST26VF016 / SST26VF032) Serial Quad I/O (SQI) Flash Memory Silicon Storage Technology
SST26VF016B 3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory Microchip
SST26VF016BA 3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory Microchip
SST26VF032 (SST26VF016 / SST26VF032) Serial Quad I/O (SQI) Flash Memory Silicon Storage Technology

Other Datasheets by SeCoS Halbleitertechnologie GmbH

Part Number Description
SST2611B P-Channel MOSFET
SST2602 N-Channel Enhancement Mode Power MosFET
SST2603 P-Channel MOSFET
SST2604 N-Channel Enhancement Mode Power MosFET
SST2605 P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com SST2610 3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION z z The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. It is universally used for all commercial-industrial applications. APPLICATIONS z z Low on-resistance Capable of 2.5V gate drive PACKAGE INFORMATION REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 0.30 0.55 0 0.10 0 10 REF. G H I J K L Millimeter Min. Max. 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95 REF.