Datasheet Summary
..
3 A, 60 V, RDS(ON) 90 mΩ N-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
RoHS pliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION z z
The SST2610 uses advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. It is universally used for all mercial-industrial applications.
APPLICATIONS z z
Low on-resistance Capable of 2.5V gate drive
PACKAGE INFORMATION
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 0.30 0.55 0 0.10 0 10
REF. G H I J K L
Millimeter Min. Max. 1.90 REF. 1.20 REF. 0.12 REF. 0.37 REF. 0.60 REF. 0.95...
