Download SST8810J Datasheet PDF
SeCoS Halbleitertechnologie GmbH
SST8810J
DESCRIPTION SST8810J uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is protected by ESD. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its mon-drain configuration. SOT-26 MARKING L8810 121 F CH DG K J PACKAGE INFORMATION Package SOT-26 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.30 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. S1 D1/D2 S2 G1 D1/D2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 ID IDM Thermal Resistance from Junction to Ambient RθJA Lead Temperature for Soldering Purposes@1/8’’ from case for 10s Junction and Storage Temperature Range TJ,...