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SST8810J - N-channel MOSFET

General Description

SST8810J uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It is protected by ESD.

This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SST8810J 7A, 20V, RDS(ON) 20 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION SST8810J uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is protected by ESD. This device is suitable for the use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. SOT-26 A E L MARKING L8810 121 B F CH DG K J PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.30 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.