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STT3455 - P-Channel MOSFET

General Description

The STT3455 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device.

The STT3455 is universally used for all commercial-industrial applications.

Key Features

  • Fast Switching Characteristic.
  • Lower Gate Charge.
  • Small Footprint & Low Profile Package D D 5 S 4 D 6 REF. 3455 Date Code G 1 D 2 D 3 G S A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed D.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STT3455 Elektronische Bauelemente -4.0A, -30V,RDS(ON) 100m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product Description The STT3455 utiltzed advance processing techniques to achieve the lowest possible on-resistance, extermely efficient and cost-effectiveness device. The STT3455 is universally used for all commercial-industrial applications. Features * Fast Switching Characteristic * Lower Gate Charge * Small Footprint & Low Profile Package D D 5 S 4 D 6 REF. 3455 Date Code G 1 D 2 D 3 G S A A1 A2 c D E E1 Millimeter Min. Max. 1.10 MAX. 0 0.10 0.70 1.00 0.12 REF. 2.70 3.10 2.60 3.00 1.40 1.80 REF. L L1 b e e1 Millimeter Min. Max. 0.45 REF. 0.60 REF. 0° 10° 0.30 0.50 0.95 REF. 1.90 REF.