SWT102UW5 Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente NPN+PNP Dual-Chip Epitaxial Planar Transistor Ro HS pliant Product A suffix of “-C” specifies halogen & lead-free Features Including two devices in USV (Ultra Superminitypewith5leads.) With Built-in bias resistors. Simplify circuit design. Reduce a quantity of parts and manufacturing process. SOT-353 F DG H CK J MARKING CODE Q 1 OUT R1 IN R2 MON Q2 R1 IN Q1 R1=47K R2=47K R2 MON Q2 R1=10K R2=47K Q1 MAXIMUM RATINGS (at Ta = 25°C) PARAMETER Output Voltage Input Voltage Output Current SYMBOL VO VI IO Q2 MAXIMUM RATINGS (at Ta = 25°C) PARAMETER Output Voltage Input Voltage Output Current SYMBOL VO VI IO Q1 Q2 MAXIMUM RATINGS (at Ta = 25°C) PARAMETER Power Dissipation Junction Temperature Storage Temperature...