SeCoS Halbleitertechnologie GmbH TIP32
PNP Transistor
FEATURES
● Medium Power Linear SwitchingAPPLICATIONS
TO-220J Collector Base● Emitter
ABSOLUTE MAXIMUM RATINGS
(TA=25°C unless otherwise specified) Parameter Symbol TIP32 Ratings TIP32C Collector - Base Voltage Collector - Emitter Voltage VCBO VCEO -40 -40 -100 -100 Emitter - Base Voltage VEBO -5 Collector Current -Continuous Collector Power Dissipation IC PC -3 2 Maximum Junction to Ambient RθJA 62.5 Junction, Storage Temperature TJ, TSTG 150, -55~150 Unit V V V A W °C / W °C 11-Jan-2012 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 Elektronische Bauelemente TIP32 / TIP32C PNP Plastic-Encapsulate TransistorELECTRICAL CHARACTERISTICS
(TA=25°C unless otherwise specified) Parameter Collector-Base Breakdown Voltage TIP32 TIP32C Symbol V(BR)CBO Min. -40 -100 Typ. - Max. - Collector-Emitter Breakdown Voltage1 TIP32 TIP32C V(BR)CEO -40 -100 - - Emitter-Base Breakdown Voltage Collector Cut-Off Current TIP32 TIP32C V(BR)EBO ICBO -5 - -- -200 TIP32...