SeCoS Halbleitertechnologie GmbH UMD2N
NPN-PNP built-in resistors Multi-Chip Digital Transistor
FEATURES
* DTA124E and DTC124E transistors are built-in a SOT-363 package. * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. (3) (2) R1 R2 DT r1 DT r2 R2 R1 (4) (5) (6) (1) .018(0.46) .010(0.26) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) .043(1.10) .035(0.90) R1=R2=22K Dimensions in inches and (millimeters) MARKING:D2ELECTRICAL CHARACTERISTICS
( Tamb=25 C unless otherwise specified) O Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~40 30 -100 150(TOTAL) 150 -55~150 Unit V V mA mW ℃ ℃ Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT 56 15.4 0.8 22 1 250 28.6 1.2 MHz VCE=10V ,IE=-5mA,f=100MHz KΩ 3 0.3 0.36 0.5 Min.