SeCoS Halbleitertechnologie GmbH UMD3N
Multi-Chip Digital Transistor
| Part No. | UMD3N |
|---|---|
| Datasheet | UMD3N Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | Multi-Chip Digital Transistor |
| Buy | Stock & Price |
FEATURES
* DTA114E and DTC114E transistors are built-in a SOT-363 package. * Transistor elements are independent, eliminating interference. * Mounting cost and area can be cut in half. (3) (2) R1 R2 DT r1 DT r2 R2 R1 (4) (5) (6) (1) 6 5 .021REF (0.525)REF .096(2.45) .085(2.15) .053(1.35) .045(1.15)● 1 2 3 .018(0.46) .010(0.26) .006(0.15) .003(0.08) .004(0.10) .000(0.00) .039(1.00) .035(0.90) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) MARKING:D3 R1=R2=10K Dimensions in inches and (millimeters)
ELECTRICAL CHARACTERISTICS
( Tamb=25 C unless otherwise specified) O Parameter Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature Symbol VCC VIN IO IC(MAX) Pd Tj Tstg Limits 50 -10~40 50 100 150(TOTAL) 150 -55~150 Unit V V mA mW ℃ ℃ Electrical characteristics (Ta=25℃) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT 30 7 0.8 10 1 250 13 1.2 MHz VCE=10V ,IE=-5mA,f=100MHz KΩ 3 0.3 0.88 0.5 Min.