SeCoS Halbleitertechnologie GmbH 2SA1020
PNP Transistor
FEATURES
● Power amplifier applications N G TO-92MOD H CLASSIFICATION OF hFE(1) Product-Rank Range 2SA1020-O 70-140 2SA1020-Y 120-240 Emitter Collector● Base M L A J D B K E Collector F C
● Base REF. A B C D E F G Emitter Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1.50 TYP. REF. H J K L M N Millimeter Min. Max. 1.70 2.05 2.70 3.20 0.85 1.15 1.60 Max 0.00 0.40 4.00 Min
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PC TJ, TSTG Ratings -50 -50 -5 -2 900 150, -55~150 Unit V V V A mW °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Cu...