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2SC1383L Datasheet PDF

SeCoS Halbleitertechnologie GmbH 2SC1383L

NPN Silicon Transistor

Part No. 2SC1383L
Datasheet 2SC1383L Download
Manufacturer
SeCoS Halbleitertechnologie GmbH
Description NPN Silicon Transistor
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2SC1383L datasheet page 1 preview

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage 2SC1383L 2SC1384L 2SC1383L Collector to Emitter Voltage 2SC1384L Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 30 60 25 50 5 1 1 150, -55~150 1 Emitter Unit V V V A W °C

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown 2SC1383L 30 - - Voltage V(BR)CBO V 2SC1384L 60 - - Collector to Emitter Breakdown Voltage 2SC1383L 2SC1384L V(BR)CEO 25 50 - - V Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V Collector Cut - Off Current ICBO - - 0.1 µA DC Current Gain hFE (1) 85 - 340 hFE (2) 50 - - Collector to Emitter Saturation Voltage VCE(sat) - - 0.4 V Base – Emitter Saturation Voltage VBE(sat) - - 1.2 V Transition Frequency fT - 200 - MHz Test Conditions IC=10µA, IE=0 IC=2mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VCE=10V, IC=500mA VCE=5V, IC=1A IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA 28-Jan-2011 Rev.
2SC1383L page 2 preview