SeCoS Halbleitertechnologie GmbH 2SC1383L
NPN Silicon Transistor
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage 2SC1383L 2SC1384L 2SC1383L Collector to Emitter Voltage 2SC1384L Emitter to Base Voltage Continuous Collector Current Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG 30 60 25 50 5 1 1 150, -55~150 1 Emitter Unit V V V A W °CELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown 2SC1383L 30 - - Voltage V(BR)CBO V 2SC1384L 60 - - Collector to Emitter Breakdown Voltage 2SC1383L 2SC1384L V(BR)CEO 25 50 - - V Emitter to Base Breakdown Voltage V(BR)EBO 5 - - V Collector Cut - Off Current ICBO - - 0.1 µA DC Current Gain hFE (1) 85 - 340 hFE (2) 50 - - Collector to Emitter Saturation Voltage VCE(sat) - - 0.4 V Base – Emitter Saturation Voltage VBE(sat) - - 1.2 V Transition Frequency fT - 200 - MHz Test Conditions IC=10µA, IE=0 IC=2mA, IB=0 IE=10µA, IC=0 VCB=20V, IE=0 VCE=10V, IC=500mA VCE=5V, IC=1A IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA 28-Jan-2011 Rev.