2SC388 Datasheet NPN Plastic-encapsulated Transistor

Manufacturer: SeCoS Halbleitertechnologie GmbH

Overview: IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G G C C C C E VCE(on) typ. = 1.

Datasheet Details

Part number	2SC388
Manufacturer	SeCoS Halbleitertechnologie GmbH
File Size	130.13 KB
Description	NPN Plastic-Encapsulated Transistor
Datasheet	2SC388-Secos.pdf

Key Features

Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of.

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