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S-8211D - BATTERY PROTECTION IC

General Description

Voltage detection pin between VM pin and VSS pin (Overcurrent / charger detection pin) Input pin for positive power supply Input pin for negative power supply Connection pin of discharge control FET gate (CMOS output) Connection pin of charge control FET gate (CMOS output) Top view 16 25 34 Figure

Key Features

  • High-accuracy voltage detection circuit Overcharge detection voltage 3.6 V to 4.5 V (5 mV step) Accuracy ±25 mV (Ta = +25°C) Overcharge release voltage 3.5 V to 4.4 V.
  • 1 Accuracy ±30 mV (Ta =.
  • 5°C to +55°C) Accuracy ±50 mV Overdischarge detection voltage Overdischarge release voltage 2.0 V to 3.0 V (10 mV step) 2.0 V to 3.4 V.
  • 2 Accuracy ±50 mV Accuracy ±100 mV Discharge overcurrent detection voltage 0.05 V to 0.30 V (10 mV step) Accuracy ±15 mV Load short-c.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S-8211D Series www.sii-ic.com © Seiko Instruments Inc., 2005-2015 BATTERY PROTECTION IC FOR 1-CELL PACK Rev.6.5_00 The S-8211D Series is a protection IC for 1-cell lithium-ion / lithium-polymer rechargeable battery and includes high-accuracy voltage detection circuits and delay circuits. The S-8211D Series is suitable for protecting 1-cell rechargeable lithium-ion / lithium-polymer battery packs from overcharge, overdischarge, and overcurrent.  Features • High-accuracy voltage detection circuit Overcharge detection voltage 3.6 V to 4.5 V (5 mV step) Accuracy ±25 mV (Ta = +25°C) Overcharge release voltage 3.5 V to 4.4 V*1 Accuracy ±30 mV (Ta = −5°C to +55°C) Accuracy ±50 mV Overdischarge detection voltage Overdischarge release voltage 2.0 V to 3.0 V (10 mV step) 2.0 V to 3.