2N2369ADCSM
FEATURES
2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 1.40 ± 0.15 (0.055 ± 0.006)
- DUAL SILICON PLANAR EPITAXIAL DUAL NPN TRANSISTOR
4.32 ± 0.13 (0.170 ± 0.005)
2.54 ± 0.13 (0.10 ± 0.005)
2 1
3 4 5
- HERMETIC CERAMIC SURFACE MOUNT PACKAGE
- SCREENING OPTIONS AVAILABLE
0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005)
6.22 ± 0.13 (0.245 ± 0.005)
A=
LCC2 PACKAGE Underside View
PAD 1
- Collector 1 PAD 2
- Base 1 PAD 3
- Base 2 PAD 4
- Collector 2 PAD 5
- Emitter 2 PAD 6
- Emitter 1
APPLICATIONS:
Hermetically sealed dual surface mount dual version of the popular 2N2369A for high reliability / space applications requiring small size and low weight devices.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO VCEO VEBO IC PD PD TSTG , TJ Collector
- Base Voltage Collector
- Emitter Voltage Emitter
- Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25°C Derate above 25°C @ TC =25°C Derate...
