Seme LAB 2N3209X
HIGH SPEED PNP SWITCHING TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) HIGH SPEED PNP SWITCHING TRANSISTOR FOR HIGH RELIABILITYAPPLICATIONS
4.32 (0.170) 12.7 (0.500) 5.33 (0.210) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. min.FEATURES
● SILICON PLANAR EPITAXIAL PNP TRANSISTOR● SCREENING OPTIONS AVAILABLE
● SPACE QUALITY LEVEL OPTIONS
● HIGH SPEED SATURATED SWITCHING
APPLICATIONS
For high reliability general purpose applications requiring small size and low weight devices. 31 2 TO-18 (TO-206AA) Pin 1 – Emitter Pin 2 – Base Pin 3 – CollectorABSOLUTE MAXIMUM RATINGS
TCASE = 25°C unless otherwise stated VCBO Collector - Base Voltage VCEO Collector - Emitter Voltage (IB = 0) VEBO Emitter – Base Voltage (IC = 0) IC Continuous Collector Current PD Total Power Dissipation at Tcase ≤ 25°C Tamb ≤ 25°C Tstg, TJ Operating and Storage Temperature Range -20V -20V -4.0V -200mA 1.2W 0.36W -65 to +200°C Semelab Plc