2N3439 Datasheet PDF

MECHANICAL DATA

Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH VOLTAGE NPN TRANSISTORS

FEATURES

4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.
● DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR
● HIGH VOLTAGE 5.08 (0.200) typ.

APPLICATIONS

: 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 These devices are particularly suited as drivers in high-voltage low current inverters, switing and series regulators. 45˚ TO39 PACKAGE Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at Tcase £ 25°C Tamb £ 50°C Storage Temperature Junction Temperature 2N3439 450V 350V 2N3440 300V 250V 7V 1A 0.5A 5W 1W –55 to 200°C 200°C Semelab plc. Telephone +44(0)1455 556565.