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2N3700DCSM - HIGH VOLTAGE / MEDIUM POWER / NPN DUAL TRANSISTOR

Key Features

  • 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005).
  • DUAL.

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Datasheet Details

Part number 2N3700DCSM
Manufacturer Seme LAB
File Size 22.66 KB
Description HIGH VOLTAGE / MEDIUM POWER / NPN DUAL TRANSISTOR
Datasheet download datasheet 2N3700DCSM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3700DCSM HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 3 4 5 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS • HIGH VOLTAGE A 6 0.23 rad. (0.009) 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.