2N3716X Datasheet PDF

MECHANICAL DATA

Dimensions in mm (inches) 40.01 (1.575) Max. 22.23 (0.875) Max. 1.09 (0.043) 0.97 (0.038) Dia. 30.40 (1.197) 29.90 (1.177) 2 11.18 (0.440) 10.67 (0.420) 1 26.67 (1.050) Max. 4.47 (0.176) Rad. 2 Pls. 11.43 (0.450) 6.35 (0.250) 12.19 (0.48) 1.63 (0.064) 11.18 (0.44) 1.52 (0.060) 4.09 (0.161) 3.84 (0.151) 2 Pls NPN SILICON EPIBASE TRANSISTOR

FEATURES

● SILICON EPIBASE NPN TRANSISTOR
● CECC SCREENING OPTIONS
● LOW FREQUENCY PIN 1 – Base 16.97 (0.668) 16.87 (0.664) TO3 Underside View PIN 2 – Emitter Case – Collector

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 100V VCEO Collector – Emitter Voltage (IB = 0) 80V VEBO Emitter – Base Voltage (IB = 0) 7.V IC Collector Current 10A IB Base Current 4A Ptot Maximum Total Power Dissipation @ TC = 25°C 150W Derate above 25°C 6.86mW / °C TJ , TSTG RθJCase Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case –65 to +200°C 1.94°C/mW Semelab plc. Telephone +44(0)1455 556565.