Seme LAB 2N5430
MEDIUM POWER NPN SILICON TRANSISTOR
| Part No. | 2N5430 |
|---|---|
| Datasheet | 2N5430 Download |
| Manufacturer |  Seme LAB |
| Description | MEDIUM POWER NPN SILICON TRANSISTOR |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) SEME 2N5430 MEDIUM POWER NPN SILICON TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) Designed for switching and wide - band amplifier applications 11.94 (0.470) 12.70 (0.500) 14.48 (0.570) 14.99 (0.590) This product is available screened in accordance with various military specs. 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) EG. 2N5430CECC–QR–B Built and screened in accordance with CECC procedures. Screened to sequence B. TO66 Package. Pin 1 Base Pin 2 Emitter Case CollectorABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC IB PD Tj Tstg RqJC Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current – Continuous Base Current Total Device Dissipation at Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance, Junction to Case.