Seme LAB 2N5784
SILICON EPITAXIAL NPN TRANSISTOR
| Part No. | 2N5784 |
|---|---|
| Datasheet | 2N5784 Download |
| Manufacturer |  Seme LAB |
| Description | SILICON EPITAXIAL NPN TRANSISTOR |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) SILICON EPITAXIAL NPN TRANSISTOR 4.19 (0.165) 4.95 (0.195) 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia.FEATURES
General purpose power transistor for switching and linear applications in a hermetic TO–39 package. 5.08 (0.200) typ. 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2.54 (0.100) 3 45˚ TO–39 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – CollectorABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO VCER(sus) VCEO(sus) VEBO IC IB PD PD TJ , TSTG TL Collector – Base Voltage Collector – Emitter Sustaining Voltage RBE = 100W Collector – Emitter Sustaining Voltage Emitter – Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation TC = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Lead temperature, ³ 1/32” (0.8mm) from seating plane for 10 s max.