Seme LAB 2N5786
SILICON EPITAXIAL NPN TRANSISTOR
| Part No. | 2N5786 |
|---|---|
| Datasheet | 2N5786 Download |
| Manufacturer |  Seme LAB |
| Description | SILICON EPITAXIAL NPN TRANSISTOR |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) SILICON EPITAXIAL NPN TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 5 .0 8 (0 .2 0 0 ) ty p .FEATURES
2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 General purpose power transistor for switching and linear applications in a hermetic TO–39 package. 4 5 ° TO39 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – CollectorABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated) VCBO VCER(sus) VCEO(sus) VEBO IC IB PD PD TJ , TSTG TL Collector – Base Voltage Collector – Emitter Sustaining Voltage RBE = 100W Collector – Emitter Sustaining Voltage Emitter – Base Voltage Continuous Collector Current Continuous Collector Current Total Device Dissipation TA = 25°C Derate above 25°C Total Device Dissipation TC = 25°C Derate above 25°C Operating Junction and Storage Temperature Range Lead temperature, ³ 1/32” (0.8mm) from seating plane for 10 s max.