Seme LAB 2N5885
NPN MULTI - EPITAXIAL POWER TRANSISTOR
MECHANICAL DATA
Dimensions in mm(inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 12 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO–3(TO204AA) PIN 1 — Base PIN 2 — Emitter . Case is Collector NPN MULTI - EPITAXIAL POWER TRANSISTORFEATURES
● HIGH VOLTAGE● LOW SATURATION VOLTAGES
● HIGH RELIABILITY
APPLICATIONS
● POWER SWITCHING CIRCUITS● LINEAR
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage (IE = 0) VCEO Collector – Emitter Voltage (IB = 0) VEBO Emitter – Base Voltage (IC = 0) IC Collector Current ICM Peak Collector Current IB Base Current Ptot Total Power Dissipation at Tcase ≤ 25°C Tstg, Storage Temperature Tj Junction Temperature 60V 60V 5V 25A 50A 7.5A 200W –65 to