• Part: 2N6295
  • Description: DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Seme LAB
  • Size: 15.31 KB
Download 2N6295 Datasheet PDF
Seme LAB
2N6295
FEATURES - LOWVCE(SAT) - HIGH CURRENT 14.48 (0.570) 14.99 (0.590) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750) APPLICATIONS - GENERAL PURPOSE AMPLIFIER - LOW FREQUENCY SWITCHING TO- 66 PIN 1 - Base PIN 2 - Emitter Case is Collector. - HAMMER DRIVER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO VCB VEB IC IB PD Tj,Tstg, Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Peak Base Current Total Power Dissipation at Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 80V 80V 5V 4A 8A 80m A 50W 0.286 W/°C - 65 to 200°C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction to Case 3.5 °C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk 11/99 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter OFF CHARACTERISTICS Collector -...