Seme LAB 2N6295
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR
| Part No. | 2N6295 |
|---|---|
| Datasheet | 2N6295 Download |
| Manufacturer |  Seme LAB |
| Description | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm(inches) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. 24.33 (0.958) 24.43 (0.962) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500)FEATURES
● LOWVCE(SAT)● HIGH CURRENT 14.48 (0.570) 14.99 (0.590) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. 1.27 (0.050) 1.91 (0.750)
APPLICATIONS
● GENERAL PURPOSE AMPLIFIER● LOW FREQUENCY SWITCHING TO–66 PIN 1 — Base PIN 2 — Emitter Case is Collector.
● HAMMER DRIVER
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCEO VCB VEB IC IB PD Tj,Tstg, Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current – Continuous Peak Base Current Total Power Dissipation at Tcase = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 80V 80V 5V 4A 8A 80mA 50W 0.286 W/°C –65 to 200°C THERMAL CHARACTERISTICS RθJC Thermal Resistance, Junction to Case 3.5 °C/W Semelab plc.