2N6796 - TMOS FET TRANSISTOR

Seme LAB

Key Features

5 .0 8 (0 .2 0 0 ) ty p.
VDSS = 100V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3.
ID = 8A.
RDSON = 0.18Ω 4 5 ° TO.
39 METAL.

2N6796 tmos fet transistor by Seme LAB - Datasheet Preview

Datasheet Details

Part number	2N6796
Manufacturer	Seme LAB
File Size	18.48 KB
Description	TMOS FET TRANSISTOR
Datasheet	2N6796 Datasheet

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Full PDF Text Transcription (Reference)

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2N6796 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) TMOS FET TRANSISTOR N – CHANNEL 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . FEATURES 5 .0 8 (0 .2 0 0 ) ty p . • VDSS = 100V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3 • ID = 8A • RDSON = 0.18Ω 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain Case ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Drain–Source Voltage VDGR Drain–Gate Voltage (RGS = 1.