Seme LAB 2N6796
TMOS FET TRANSISTOR
| Part No. | 2N6796 |
|---|---|
| Datasheet | 2N6796 Download |
| Manufacturer |  Seme LAB |
| Description | TMOS FET TRANSISTOR |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) TMOS FET TRANSISTOR N – CHANNEL 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia .FEATURES
5 .0 8 (0 .2 0 0 ) ty p .● VDSS = 100V 2 .5 4 (0 .1 0 0 ) 1 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 3
● ID = 8A
● RDSON = 0.18Ω 4 5 ° TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain Case
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) Drain–Source Voltage VDGR Drain–Gate Voltage (RGS = 1.0mΩ) VGS Gate–Source Voltage ID Drain Current Continuous IDM Drain Current Pulsed PD Total Device Dissipation @ TC = 25°C Derate above 25°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.5mm from Case for 10 s VDSS 100V 100V ±20V 8.0A 32A 25W 0.2W/ °CW –55 to +150°C 5.0°CW 175°CW 300°C Semelab plc.