Seme LAB 2N6800
N-CHANNEL POWER MOSFET
| Part No. | 2N6800 |
|---|---|
| Datasheet | 2N6800 Download |
| Manufacturer |  Seme LAB |
| Description | N-CHANNEL POWER MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) SEME 2N6800 N–CHANNEL POWER MOSFET BVDSS ID RDS(on) 400V 3.0A 1.0W 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 m a x . (0 .0 3 5 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 5 .0 8 (0 .2 0 0 ) ty p . 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) ! 2 .5 4 (0 .1 0 0 )FEATURES
● AVALANCHE ENERGY RATED● HERMETICALLY SEALED
● DYNAMIC dv/dt RATING 4 5 ° TO39 – Package Pin 1 – Source Pin 2 – Gate Pin 3 – Drain Also available in a low profile version.
● SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD dv/dt TJ , Tstg RqJC RqJCA Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Peak Diode Recovery 3 ±20V (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) 3A 2A...