Seme LAB 2N6802
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
| Part No. | 2N6802 |
|---|---|
| Datasheet | 2N6802 Download |
| Manufacturer |  Seme LAB |
| Description | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) N–CHANNEL ENHANCEMENT MODE POWER MOSFET 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. BVDSS ID(cont) RDS(on) 500V 2.5 1.5Ω 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 2 13 2.54 (0.100) 45° TO39 – Package (TO-205AF) Underside View Pin 1 – Source Pin 2 – Gate Pin 3 – DrainFEATURES
● AVALANCHE ENERGY RATED● HERMETICALLY SEALED
● DYNAMIC dv/dt RATING
● SIMPLE DRIVE REQUIREMENTS
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 2.5A ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) IDM Pulsed Drain Current 1 1.5A 11A PD Power Dissipation @ Tcase = 25°C 25W Linear Derating Factor 0.2W/°C EAS dv/dt Single Pulse Avalanche Energy 2 Peak Diode Recovery 3 0.35