Seme LAB 2N7002DCSM
Dual N-Channel MOSFET
| Part No. | 2N7002DCSM |
|---|---|
| Datasheet | 2N7002DCSM Download |
| Manufacturer |  Seme LAB |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) DUAL N–CHANNEL ENHANCEMENT MODE MOS TRANSISTOR 1.40 ± 0.15 (0.055 ± 0.006) 0.64 ± 0.06 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 2.54 ± 0.13 (0.10 ± 0.005) 2 1 A 3 4 5 4.32 ± 0.13 (0.170 ± 0.005)FEATURES
● V(BR)DSS = 60V● RDS(ON) = 7.5Ω
● ID = 0.115A 6 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) 6.22 ± 0.13 (0.245 ± 0.005) CERAMIC LCC2 PACKAGE (underside view) PAD 1 - Drain 1 PAD 2 - Gate 1 PAD 3 - Gate 2 PAD 4 - Drain 2 PAD 5 - Source 2 PAD 6 - Source 1
ABSOLUTE MAXIMUM RATINGS
(TCASE = 25°C unless otherwise stated) PER SIDE VDS VGS ID IDM PD Tj Tstg R θJA Drain – Source Voltage Gate – Source Voltage Drain Current Pulsed Drain Current * Power Dissipation Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Ambient TOTAL DEVICE 60V ±40V ±0.115A 0.8A 200mW 1.60mW/°C 400mW 2.0mW/°C –55 to 150°C –55 to 150°C 625°C/W 250°C/W * Pulse width limited by maximum junction temperature.