BDS10IG
BDS10IG is SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE manufactured by Seme LAB.
FEATURES
- HERMETIC TO257 ISOLATED METAL PACKAGES
- HIGH RELIABILITY
- MILITARY AND SPACE OPTIONS
0.64 (0.025) Dia. 0.89 (0.035)
2.54 (0.100) BSC
3.05 (0.120) BSC
- SCREENING TO CECC LEVELS
- ALSO AVAILABLE IN TO220 METAL AND TO220 CERAMIC SURFACE MOUNT PACKAGES
TO257
- TO257 Isolated Metal Package.
Pin 1
- Base Pin 2
- Collector Pin 3
- Emitter
APPLICATIONS
- POWER LINEAR AND SWITCHING APPLICATIONS
- GENERAL PURPOSE POWER
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)
VCBO VCEO VEBO IE , IC IB Ptot Tstg Tj Collector
- Base voltage (IE = 0) Collector
- Emitter voltage (IB = 0) Emitter
- Base voltage (IC = 0) Emitter , Collector current Base current Total power dissipation at Tcase £ 75°C Storage Temperature Junction Temperature
BDS10 60V 60V
BDS11 80V 80V 5V 15A 5A 90W
BDS12 100V 100V
- 65 TO 200°C 200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk
Prelim. 9/98
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
SEME
BDS10IG BDS11IG BDS12IG
Parameter
ICBO Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0)
Test Conditions
BDS10 BDS11 BDS12 BDS10 BDS11 BDS12 VEB = 5V VCB = 60V VCB = 80V VCB = 100V VCE = 30V VCE = 40V VCE =...
