BFY75 - Bipolar NPN Device

Seme LAB

Datasheet Details

Part number	BFY75
Manufacturer	Seme LAB
File Size	10.36 KB
Description	Bipolar NPN Device
Datasheet	BFY75 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BFY75	NPN Transistor	SGS-ATES
BFY72	NPN Transistor	SGS-ATES
BFY74	NPN Transistor	SGS-ATES
BFY76	NPN Transistor	SGS-ATES
BFY180	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA)	Siemens Semiconductor Group

Other Datasheets by Seme LAB

Part Number	Description
BFY76	Bipolar NPN Device in a Hermetically sealed TO18 Metal Package
BFY77	Bipolar NPN Device in a Hermetically sealed TO18 Metal Package
BFY50	MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
BFY51	Bipolar NPN Device
BFY52	Bipolar NPN Device

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

BFY75 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 45 Units V A @ 5/10m (VCE / IC) 65 250M 300 Hz 0.36 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.