Seme LAB BUL64B
NPN Transistor
| Part No. | BUL64B |
|---|---|
| Datasheet | BUL64B Download |
| Manufacturer |  Seme LAB |
| Description | NPN Transistor |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm (inches) 6.40 (0.252) 6.78 (0.267) 5.21 (0.205) 5.46 (0.215) SEME BUL64B 2.18 (0.086) 2.44 (0.096) 0.84 (0.033) 0.94 (0.037) ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR Designed for use in electronic ballast applications 1.09 (0.043) 1.30 (0.051) 5.97 (0.235) 6.22 (0.245) 1 2 3 0.76 (0.030) 1.14 (0.045) 0.64 (0.025) 0.89 (0.035) 8.89 (0.350) 9.78 (0.385)●
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● SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 2.31 (0.091) Typ. 2.31 (0.091) Typ. 0.46 (0.018) 0.61 (0.024)
FEATURES
● Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range.● Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
● Triple Guard Rings for improved control of high voltages. 4.60 (0.181) Typ. 1.04 (0.041) 1.14 (0.045) I–PAK (TO–251) Pin 1 – Base Pin 2 – Collector Pin 3 – Emitter
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IC(PK) IB Ptot Tstg Semelab plc.