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BUL72B - NPN Transistor

Datasheet Summary

Features

  • Multi.
  • base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pin 3 - Emitter SOT-223 Pin 1 - Base Pin 2 - Collector Pin 4 - Collector.
  • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
  • Triple Guard Rings for improved control of high voltages.

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Datasheet preview – BUL72B

Datasheet Details

Part number BUL72B
Manufacturer Seme LAB
File Size 21.01 KB
Description NPN Transistor
Datasheet download datasheet BUL72B Datasheet
Additional preview pages of the BUL72B datasheet.

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Full PDF Text Transcription

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LAB MECHANICAL DATA Dimensions in mm 0.32 0.24 SEME BUL72B ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 13° 0.10 0.02 16° max. 1.70 max. 10° max. 6.7 6.3 3.1 2.9 Designed for use in electronic ballast applications • • • • SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING HIGH ENERGY RATING 4 3.7 7.3 3.3 6.7 1 2 3 1.05 0.85 2.30 4.60 0.80 0.60 FEATURES • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and energy ratings across full temperature range. Pin 3 - Emitter SOT-223 Pin 1 - Base Pin 2 - Collector Pin 4 - Collector • Ion implant and high accuracy masking for tight control of characteristics from batch to batch.
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