Seme LAB BUR52
HIGH CURRENT NPN SILICON
| Part No. | BUR52 |
|---|---|
| Datasheet | BUR52 Download |
| Manufacturer |  Seme LAB |
| Description | HIGH CURRENT NPN SILICON |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm(inches) HIGH CURRENT NPN SILICON TRANSISTOR 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)FEATURES
● FAST SWITCHING● HIGH PULSE POWER 22.23 (0.875) max. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 1.47 (0.058) 1.60 (0.063)
APPLICATIONS
● POWER SWITCHING CIRCUITS● MOTOR CONTROL TO3 (TO204AE) Pin 1 = Base Pin 2 = Emitter Case = Collector
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM IB Ptot Tstg, Tj RθJC Collector – Base Voltage (IE= 0V) Collector – Emitter Voltage (IB= 0V) Collector – Emitter Voltage (IC= 0V) Collector Current Peak Collector Current (tp = 10 ms) Base Current Total Power Dissipation at Tcase ≤ 25°C Storage Temperature Max. Operating Junction Temperature Junction to Case Thermal Resistance 350V 250V 10V 60A 80A 16A 350W -65°C to +200°C 200°C 0.5°C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice.