BUX51
BUX51 is NPN SILICON TRANSISTOR manufactured by Seme LAB.
FEATURES
5.08 (0.200) typ.
- FAST SWITCHING
- HIGH PULSE POWER
2.54 (0.100)
2 1
0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034)
45˚
APPLICATIONS
- POWER SWITCHING CIRCUITS Pin 3 = Collector
- MOTOR CONTROL
TO39 Pin 1 = Emitter Pin 2 = Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VCBO VCEX VCEO VER VEBO IC ICM IB Ptot Tstg, Tj Collector
- Base Voltage Collector
- Emitter Voltage (VBE= -1.5V) Collector
- Emitter Voltage Collctor
- Emitter Voltage RBE = 100W Emitter
- Base Voltage Collector Current Peak Collector Current (tp = 10 ms) Base Current Total Power Dissipation at Tcase £ 25°C Storage Temperature Junction Temperature 300V 300V 200V 260V 7V 3.5A 5A 0.7A 10W 200°C -65°C to +200°C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk
Prelim.10/99
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Parameter
VCEO(sus) V(BR)EBO ICEO ICEX IEBO VCE(sat)- VBE(sat)- IS/b ft td + tr tf Collector
- Emitter Sustaining Voltage Emitter
- Base Breakdown Voltage Collector Emitter Cut-off Current Collector Emitter Cut-off Current Emitter- Base Cut-off Current Collector
- Emitter Saturation Voltage Base
- Emitter Saturation Voltage Second Breakdown Collector Current Transition Frequency Turn- On Time Fall Time Carrier Storage Time IC = 0 IC = 1A IC = A IC = 2A VCE = 40V IC = 0.5A f = 10MHz IC = 2A IC = 2A IB2
- 0.2A IC = 2A IB2
- 0.2A IB1 =0.2A IB = 0.2A IB1 =0.2A L = 25m H IC = 0 VCE = 160V VCE = 250V IE = 5m A IB = 0 VBE =
- 1.5V TC = 125°C VEB = 5V IB = 0.1A IB = 0.2A IB = 0.2A t = 1s VCE = 10V 0.25 8 0.45 0.2 1.2 0.8 0.5 2.5 s 0.15 0.3 0.9
Test Conditions
IC = 200m A IB = 0.5A
Min.
200 7
Typ.
Max. Unit
V V 0.5 0.1 0.5 0.5 0.5 1 1.3 m A m A m A V V A MHz...