• Part: BUX51
  • Description: NPN SILICON TRANSISTOR
  • Category: Transistor
  • Manufacturer: Seme LAB
  • Size: 17.72 KB
Download BUX51 Datasheet PDF
Seme LAB
BUX51
BUX51 is NPN SILICON TRANSISTOR manufactured by Seme LAB.
FEATURES 5.08 (0.200) typ. - FAST SWITCHING - HIGH PULSE POWER 2.54 (0.100) 2 1 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45˚ APPLICATIONS - POWER SWITCHING CIRCUITS Pin 3 = Collector - MOTOR CONTROL TO39 Pin 1 = Emitter Pin 2 = Base ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEX VCEO VER VEBO IC ICM IB Ptot Tstg, Tj Collector - Base Voltage Collector - Emitter Voltage (VBE= -1.5V) Collector - Emitter Voltage Collctor - Emitter Voltage RBE = 100W Emitter - Base Voltage Collector Current Peak Collector Current (tp = 10 ms) Base Current Total Power Dissipation at Tcase £ 25°C Storage Temperature Junction Temperature 300V 300V 200V 260V 7V 3.5A 5A 0.7A 10W 200°C -65°C to +200°C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk Prelim.10/99 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus) V(BR)EBO ICEO ICEX IEBO VCE(sat)- VBE(sat)- IS/b ft td + tr tf Collector - Emitter Sustaining Voltage Emitter - Base Breakdown Voltage Collector Emitter Cut-off Current Collector Emitter Cut-off Current Emitter- Base Cut-off Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Second Breakdown Collector Current Transition Frequency Turn- On Time Fall Time Carrier Storage Time IC = 0 IC = 1A IC = A IC = 2A VCE = 40V IC = 0.5A f = 10MHz IC = 2A IC = 2A IB2 - 0.2A IC = 2A IB2 - 0.2A IB1 =0.2A IB = 0.2A IB1 =0.2A L = 25m H IC = 0 VCE = 160V VCE = 250V IE = 5m A IB = 0 VBE = - 1.5V TC = 125°C VEB = 5V IB = 0.1A IB = 0.2A IB = 0.2A t = 1s VCE = 10V 0.25 8 0.45 0.2 1.2 0.8 0.5 2.5 s 0.15 0.3 0.9 Test Conditions IC = 200m A IB = 0.5A Min. 200 7 Typ. Max. Unit V V 0.5 0.1 0.5 0.5 0.5 1 1.3 m A m A m A V V A MHz...