Seme LAB BUY48
HIGH CURRENT SILICON EXPITAXIAL PLANAR NPN TRANSISTOR
MECHANICAL DATA
Dimensions in mm (inches) HIGH VOLTAGE, HIGH CURRENT SILICON EXPITAXIAL PLANAR NPN TRANSISTOR 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) 1 2 .7 0 (0 .5 0 0 ) m in . 0 .8 9 (0 .0 3 5 )m ax. 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) d ia . 5 .0 8 (0 .2 0 0 ) ty p . 0 .6 6 (0 .0 2 6 ) 1 .1 4 (0 .0 4 5 ) 0 .7 1 (0 .0 2 8 ) 0 .8 6 (0 .0 3 4 ) 2 13 45° 2 .5 4 (0 .1 0 0 )APPLICATIONS
Intended for High Voltage, High Current, SwitchingAPPLICATIONS
up to 7A. TO–39 PACKAGE Pin 1 – Emitter Pin 2 – Base Pin 3 – CollectorABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM Ptot TSTG TJ Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current (IE = 0) (IB = 0) (IC = 0) Peak Collector Current (repetitive) Total Power Dissipation Storage Temperature Range @Tamb £ 25°C @Tcase £ 50°C Maximum Operat