• Part: BUZ50A-220M
  • Description: MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS
  • Category: Transistor
  • Manufacturer: Seme LAB
  • Size: 15.27 KB
Download BUZ50A-220M Datasheet PDF
Seme LAB
BUZ50A-220M
FEATURES - HERMETIC TO220 ISOLATED METAL PACKAGE - CECC SCREENING OPTIONS - JAN LEVEL SCREENING OPTIONS 12.70 (0.50 min) 2.54 (0.1) BSC 1.0 (0.039) 2.70 (0.106) TO220M (TO-257AB)- Isolated Metal Package Pin 1 - Gate Pin 2 - Drain Pin 3 - Source APPLICATIONS: Hermetically sealed version for high reliability power linear and switching applications ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Drain - Source Voltage Gate - Source Voltage Continious Drain Current Maximum Pulsed Drain Current Total Power Dissipation at Tcase ≤ 25°C Tstg Storage Temperature Range Tj Operating Junction Temperature Range BUZ50A 1000V BUZ50B 1000V ±20V ±20V 1.0A 1.5A 4.0A 4.5A 75W - 65°C To...