Seme LAB BUZ50B-220M
MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS
| Part No. | BUZ50B-220M |
|---|---|
| Datasheet | BUZ50B-220M Download |
| Manufacturer |  Seme LAB |
| Description | MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS |
| Buy | Stock & Price |
MECHANICAL DATA
Dimensions in mm 10.6 (0.42) 0.8 4.6 (0.18) (0.03) 3.70 Dia. Nom 16.5 (0.65) 1.5(0.53) 10.6 (0.42) 123 MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORSFEATURES
● HERMETIC TO220 ISOLATED METAL PACKAGE● CECC SCREENING OPTIONS
● JAN LEVEL SCREENING OPTIONS 12.70 (0.50 min) 2.54 (0.1) BSC 1.0 (0.039) 2.70 (0.106) TO220M (TO-257AB)- Isolated Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source
APPLICATIONS
: Hermetically sealed version for high reliability power linear and switching applicationsABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage VGS Gate – Source Voltage ID Continious Drain Current IDM Maximum Pulsed Drain Current PD Total Power Dissipation at Tcase ≤ 25°C Tstg Storage Temperature Range Tj Operating Junction Temperature Range BUZ50A 1000V BUZ50B 1000V ±20V ±20V 1.0A 1.5A 4.0A 4.5A 75W –65°C To 200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice.