D1001UK Overview
Key Features
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- SIMPLE BIAS CIRCUITS
- HIGH GAIN – 16 dB MINIMUM
| Part | D1001UK |
|---|---|
| Description | METAL GATE RF SILICON FET |
| Manufacturer | Seme LAB |
| Size | 79.36 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| D1001 | Renesas | 2SD1001 |
| D100E60 | Infineon | Fast Switching Emitter Controlled Diode |
| CBR1-D100S | Central Semiconductor | 1.0 AMP DUAL IN LINE BRIDGE RECTIFIER |
| STR-D1005T | Sanken | SANKEN HYBRID VOLTAGE REGULATOR MODULE |
| Q62702-D1005 | Siemens Semiconductor Group | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |