D1006UK Datasheet PDF

MECHANICAL DATA

B C A 1 2 3 E FG 6 5 4 J D H K QN PIN 1 PIN 3 PIN 5 SOURCE SOURCE GATE DIM mm A 9.09 B 19.3 C 45° D 5.71 E 1.65R F 10.16 G 20.32 H 19.30 J 1.52R K 10.77 M 22.86 N 3.17 O 0.13 P 4.19 Q 6.35 M DV PIN 2 PIN 4 PIN 6 OP DRAIN SOURCE SOURCE Tol. 0.13 0.13 5° 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.02 0.13 REF Inches 0.358 0.760 45° 0.225 0.065R 0.400 0.800 0.760 0.060R 0.424 0.900 0.125 0.005 0.165 0.250 Tol. 0.005 0.005 5° 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.001 0.005 REF GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W – 28V – 175MHz SINGLE ENDED

FEATURES

● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND

APPLICATIONS

● LOW Crss
● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 14 dB MINIMUM

APPLICATIONS

● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) PD Power Dissipation 220W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 30A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab plc.