Seme LAB D1008UK
METAL GATE RF SILICON FET
| Part No. | D1008UK |
|---|---|
| Datasheet | D1008UK Download |
| Manufacturer |  Seme LAB |
| Description | METAL GATE RF SILICON FET |
| Buy | Stock & Price |
MECHANICAL DATA
B (2 pls) E A C2 3 1 5 4 G (4 pls) F O K D PIN 1 PIN 3 PIN 5 HJ I DK SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 MN DRAIN 1 GATE 2 DIM mm A 6.45 B 1.65R C 45° D 16.51 E 6.47 F 18.41 G 1.52 H 4.82 I 24.76 J 1.52 K 0.81R M 0.13 N 2.16 Tol. Inches Tol. 0.13 0.254 0.005 0.13 0.065R 0.005 5° 45° 5° 0.76 0.650 0.03 0.13 0.255 0.005 0.13 0.725 0.005 0.13 0.060 0.005 0.25 0.190 0.010 0.13 0.975 0.005 0.13 0.060 0.005 0.13 0.032R 0.005 0.02 0.005 0.001 0.13 0.085 0.005 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 80W – 28V – 500MHz PUSH–PULLFEATURES
● SIMPLIFIED AMPLIFIER DESIGN● SUITABLE FOR BROAD BAND
APPLICATIONS
● LOW Crss● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 13 dB MINIMUM
APPLICATIONS
● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHzABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) PD Power Dissipation 175W BVDSS Drain – Source Breakdown Voltage * 70V BVGSS Gate – Source Breakdown Voltage * ±20V ID(sat) Drain Current * 10A Tstg Storage Tempe...
