D1009UK
Key Features
- SIMPLIFIED AMPLIFIER DESIGN
- SUITABLE FOR BROAD BAND APPLICATIONS
- LOW Crss
- SIMPLE BIAS CIRCUITS
- LOW NOISE
- HIGH GAIN - 10 dB MINIMUM
- Part: D1009UK
- Description: METAL GATE RF SILICON FET
- Manufacturer: Seme LAB
- Size: 95.92 KB
Datasheets by Manufacturer
| Part Number | Manufacturer | Description |
|---|---|---|
| CBR1-D100S | Central Semiconductor | 1.0 AMP DUAL IN LINE BRIDGE RECTIFIER |
| STR-D1005T | Sanken | SANKEN HYBRID VOLTAGE REGULATOR MODULE |
| D10040200GT | PDI | Product Specification |
| D10040180GT | PDI | GaAs Power Doubler |
| D10040270GT | PDI | GaAs Power Doubler |
| D10040230P1 | PREMIER DEVICES | Hybrid Power Doubler amplifier module |
| D10040230PL1 | RF Micro Devices | 45-1000MHz GaAs/GaN PWR DBLR HYBRID |
| CBR1-D100 | Central Semiconductor | SILICON BRIDGE RECTIFIERS |
| D1005 | Renesas | 2SD1005 |
| D10040180GTH | PDI | GaAs Power Doubler |