• Part: D1011UK
  • Description: METAL GATE RF SILICON FET
  • Manufacturer: Seme LAB
  • Size: 132.58 KB
Download D1011UK Datasheet PDF
Seme LAB
D1011UK
D1011UK is METAL GATE RF SILICON FET manufactured by Seme LAB.
FEATURES - SIMPLIFIED AMPLIFIER DESIGN - SUITABLE FOR BROAD BAND APPLICATIONS - VERY LOW Crss - SIMPLE BIAS CIRCUITS - LOW NOISE - HIGH GAIN - 13 d B MINIMUM APPLICATIONS - HF/VHF/UHF MUNICATIONS from 1 MHz to 1GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) Power Dissipation 30W BVDSS Drain - Source Breakdown Voltage 70V BVGSS Gate - Source Breakdown Voltage ±20V ID(sat) Drain Current 5A Tstg Storage Temperature - 65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://.semelab.co.uk Document Number 6220 Issue 2 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Drain- Source BVDSS Breakdown...