D1011UK Datasheet PDF

MECHANICAL DATA

A 8 D 7 6 5 1 2 CB 3 4 H METAL GATE RF SILICON FET N GOLD METALLISED MULTI-PURPOSE SILICON P DMOS RF FET 10W – 28V – 500MHz SINGLE ENDED K L J M E F G SO8 PACKAGE PIN 1 – SOURCE PIN 5 – SOURCE PIN 2 – DRAIN PIN 6 – GATE PIN 3 – DRAIN PIN 7 – GATE PIN 4 – SOURCE PIN 8 – SOURCE Dim. mm A 4.06 B 5.08 C 1.27 D 0.51 E 3.56 F 4.06 G 1.65 H 0.76 0.51 J 1.02 K 45° 0° L 7° M 0.20 N 2.18 P 4.57 Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08 Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180 Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003

FEATURES

● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND

APPLICATIONS

● VERY LOW Crss
● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 13 dB MINIMUM

APPLICATIONS

● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1GHz

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) PD Powe...