D1015UK Datasheet PDF

MECHANICAL DATA

B (4 pls) C G (t yp ) 2 3 1 E AD 5 4 I F GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 125W – 28V – 400MHz PUSH–PULL PIN 1 PIN 3 PIN 5 NM H DH SOURCE (COMMON) DRAIN 2 GATE 1 JK PIN 2 PIN 4 DRAIN 1 GATE 2 DIM mm A 13.97 B 5.72 C 45° D 9.78 E 1.65R F 23.75 G 1.52R H 30.48 I 19.17 J 0.13 K 2.54 M 1.52 N 5.08 Tol. Inches Tol. 0.26 0.550 0.010 0.13 0.225 0.005 5° 45° 5° 0.13 0.385 0.005 0.13 0.065R 0.005 0.13 0.935 0.005 0.13 0.060R 0.005 0.13 1.200 0.005 0.26 0.755 0.010 0.02 0.005 0.001 0.13 0.100 0.005 0.13 0.060 0.005 0.50 0.200 0.020

FEATURES

● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND

APPLICATIONS

● LOW Crss
● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 13 dB MINIMUM

APPLICATIONS

● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 400 MHz

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) PD Power Dissipation 350W BVDSS Drain – Source Breakdown Voltage * 70V BVGSS Gate – Source Breakdown Voltage * ±20V ID(sat) Drain Current * 20A Tstg Storage Temp...