D1016UK Datasheet PDF

MECHANICAL DATA

B H C 23 G 1 AD E 54 P F METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 28V – 500MHz PUSH–PULL I PIN 1 PIN 3 PIN 5 N M O JK DQ SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 P 3.18 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13 0.25 Inches 0.645 0.060 45° 0.250 0.130 0.560 0.05 x 45° 0.060 0.250 0.005 0.085 0.060 0.200 0.744 0.125 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005 0.010

FEATURES

● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND

APPLICATIONS

● VERY LOW Crss
● USEFUL PO AT 1GHz
● LOW NOISE
● HIGH GAIN – 13 dB MINIMUM

APPLICATIONS

● VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) PD Power Dissipation 100W BVDSS Drain – Source Breakdown Voltage * 70V BVGSS Gate – Source Breakdown...