D1019UK Datasheet PDF

MECHANICAL DATA

C 1 2 4 A 3 B D PIN 1 PIN 3 DRAIN GATE DW PIN 2 PIN 4 SOURCE SOURCE DIM mm A 26.16 B 5.72 C 45° D 7.11 E 0.13 F 1.52 G 0.43 H 7.67 Tol. 0.38 0.13 5° 0.13 0.03 0.13 0.20 REF Inches 1.030 0.225 45° 0.280 0.005 0.055 0.060 0.120 Tol. 0.015 0.005 5° 0.005 0.001 0.005 0.008 REF GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 175MHz SINGLE ENDED

FEATURES

● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND

APPLICATIONS

● LOW Crss
● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 16 dB MINIMUM

APPLICATIONS

● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) PD Power Dissipation 50W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 5A Tstg Storage Temperature –65 to 150°C Tj Maximum Operating Junction Temperature 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press.