Seme LAB D1022UK
METAL GATE RF SILICON FET
| Part No. | D1022UK |
|---|---|
| Datasheet | D1022UK Download |
| Manufacturer |  Seme LAB |
| Description | METAL GATE RF SILICON FET |
| Buy | Stock & Price |
MECHANICAL DATA
B (2 pls) E A C2 3 1 5 4 G (4 pls) F O K D PIN 1 PIN 3 PIN 5 HJ I DK SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 MN DRAIN 1 GATE 2 DIM mm A 6.45 B 1.65R C 45° D 16.51 E 6.47 F 18.41 G 1.52 H 5.08 I 24.76 J 1.52 K 0.81R M 0.10 N 2.16 O 12.80 Tol. Inches Tol. 0.13 0.254 0.005 0.13 0.065R 0.005 5° 45° 5° 0.76 0.650 0.03 0.13 0.255 0.005 0.13 0.725 0.005 0.13 0.060 0.005 max 0.200 max 0.13 0.975 0.005 0.13 0.060 0.005 0.13 0.032R 0.005 0.02 0.004 0.001 0.13 0.085 0.005 max 0.504 max GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULLFEATURES
● SIMPLIFIED AMPLIFIER DESIGN● SUITABLE FOR BROAD BAND
APPLICATIONS
● LOW Crss● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
● HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHzABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) PD Power Dissipation 292W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 15A Tstg...
