D1025UK Datasheet PDF

MECHANICAL DATA

D (2 pls) C E B 1 2 3 A G 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 175MHz SINGLE ENDED PIN 1 PIN 3 PIN 5 H I FM K DT SOURCE (COMMON) PIN 2 SOURCE (COMMON) PIN 4 DRAIN JN GATE SOURCE (COMMON) DIM mm A 6.35 DIA B 3.17 DIA C 18.41 D 5.46 E 5.21 F 7.62 G 21.59 H 3.94 I 12.70 J 0.13 K 24.76 M 2.59 N 4.06 Tol. 0.13 0.13 0.25 0.13 0.13 MAX 0.38 0.13 0.13 0.03 0.13 0.13 0.25 Inches 0.250 DIA 0.125 DIA 0.725 0.215 0.205 0.300 0.850 0.155 0.500 0.005 0.975 0.102 0.160 Tol. 0.005 0.005 0.010 0.005 0.005 MAX 0.015 0.005 0.005 0.001 0.005 0.005 0.010

FEATURES

● SIMPLIFIED AMPLIFIER DESIGN
● SUITABLE FOR BROAD BAND

APPLICATIONS

● LOW Crss
● SIMPLE BIAS CIRCUITS
● LOW NOISE
● HIGH GAIN – 16 dB MINIMUM

APPLICATIONS

● HF/VHF COMMUNICATIONS from 1 MHz to 175 MHz

ABSOLUTE MAXIMUM RATINGS

(Tcase = 25°C unless otherwise stated) PD Power Dissipation 175W BVDSS Drain – Source Breakdown Voltage 70V BVGSS Gate – Source Breakdown Voltage ±20V ID(sat) Drain Current 25A T...